MRF7S19100N (Motorola)
Electronic component documentation (datasheet) «MRF7S19100N» (MOSFET), manufacturer Motorola. Download datasheet file:
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| Partname | MRF7S19100N |
| Description | RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for CDMA base station applications with frequencies from 1930 to1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To beused in Class AB and Class C for PCN - PCS/cel lular radi o and WLLapplications.• Typical Single- Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR |
| Functional | MOSFET | | Manufacturer | Motorola, Inc. |  |
| Site | www.freescale.com |
| | | Size | Pages: 15, 543.94Kb |
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